| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a process model to eliminate errors caused by variance in the mask manufacturing process, to provide a method for designing a mask pattern including the above method, and to provide a mask and a method for manufacturing a semiconductor device. <P>SOLUTION: The method for forming a process model includes processes of forming a designed test pattern on a test mask, reproducing the test pattern based on the measurement of the test pattern on the test mask, and fitting the designed data of the reproduced test pattern and the measurement result of the pattern transferred in the process of exposing the test mask. The method for designing a mask pattern includes a process of correcting the pattern by using the above method. The mask has a mask pattern designed by the above method. The method for manufacturing a semiconductor device includes a lithographic process using the above mask. <P>COPYRIGHT: (C)2004,JPO</p> |
