发明名称 MULTIPLE LINE GRID AND HIGH-PERFORMANCE SEMICONDUCTOR PACKAGE USING THE SAME
摘要 PURPOSE: A multiple line grid is provided to control an increase of an interconnection line caused by a decoupling capacitor by installing a decoupling capacitor circuit electrically connected to a power terminal and a ground terminal of a semiconductor chip in a space region between a multiple line grid with a cavity or a substrate base guaranteed by the multiple line grid and a PCB(printed circuit board). CONSTITUTION: A cavity region(134) is formed inside a predetermined portion of a multiple line grid body(130). A plurality of main through holes(132) are located in the multiple line grid except the cavity region, penetrating and electrically connecting the upper and lower portions of the multiple line grid. A decoupling capacitor multiple line grid body(136) is disposed in the cavity region, separated from the multiple line grid body by a predetermined interval. A plurality of sub through holes(138) are located in the decoupling capacitor multiple line grid body, penetrating and electrically connecting the upper and lower portions of the multiple line grid.
申请公布号 KR20040047248(A) 申请公布日期 2004.06.05
申请号 KR20020075389 申请日期 2002.11.29
申请人 GLOTECH INC. 发明人 KIM, YEONG SU;YOON, JONG GWANG
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址