METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE BY DUAL EXPOSURE

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device by dual exposure is provided to prevent generation of sidelobe in forming a dense contact hole by separating a photomask for forming the dense contact hole into two photomasks with rare mask patterns and by forming a resist pattern by dual exposure. CONSTITUTION: An etch target layer is formed on a semiconductor substrate. Resist is applied to the upper surface of the etch target layer. The photomask corresponding to dense contact holes for forming the resist is divided into two masks to fabricate the first photomask(30a). The first exposure process is performed by using the first photomask. The second exposure process is performed on the firstly exposed resist by using the second photomask(30b). The twice-exposed resist is developed.