| 摘要 |
PURPOSE: A method for forming a landing plug of a semiconductor device is provided to be capable of securing low resistance enough. CONSTITUTION: An interlayer dielectric(27) is formed on a semiconductor substrate(20), wherein the semiconductor substrate is completed with a predetermined process. A contact hole is formed by selectively etching the interlayer dielectric for partially exposing the semiconductor substrate. The first conductive layer(29) made of silicon is selectively formed on the exposed semiconductor substrate through the contact hole as much as a predetermined thickness. The second conductive layer(30) is formed on the entire surface of the resultant structure for filling the contact hole. A landing plug(300) is formed by etching the second conductive layer until the interlayer dielectric and a hard mask are exposed. Preferably, the second conductive layer is one selected from a group consisting of a WSix, TiSix, CoSix, CrSix, NiSix, TaSix, HfSix, ZrSix, FeSix, YSix, MoSix layer. Preferably, the second conductive layer is made of a W/WNx layer.
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