发明名称 RESIST MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To produce a resist material which has a good dimensional stability with controlled swell characteristics while maintaining O<SB>2</SB>RIE resistance, and is soluble in water and can be water developed. <P>SOLUTION: The resist material is a silicon-containing polymer compound, and comprises a polymer compound as an active ingredient, represented by formula (1) (wherein R<SP>1</SP>is a 1-5C alkyl group, an aryl group, or the like; R<SP>2</SP>and R<SP>3</SP>are each hydrogen, a hydroxy group, a 1-7C alkoxy group, a phenoxy group, a 1-10C alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, or the like, the R<SP>2</SP>and the R<SP>3</SP>may be identical or different; x and y are each an integer of 1-10; and n is an integer of 1-10,000). Further, the resist material is relatively soluble in water at a low-temperature region, and has a turbidity point that the material becomes insoluble in water at a higher temperature than the low-temperature region, and at least either the R<SP>2</SP>or the R<SP>3</SP>being a specific group which is a crosslinkable substituent group, and the material being a negative type resist material which becomes insoluble in water by crosslinking the crosslinkable substituent group at a temperature of the low-temperature region. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004169041(A) 申请公布日期 2004.06.17
申请号 JP20040006076 申请日期 2004.01.13
申请人 HOKUSHIN IND INC 发明人 KATO MASAO;NAGASAKI YUKIO;MATSUKURA FUMIAKI;TOKUDA TAKASHI;AOKI HIDETOSHI
分类号 G03F7/039;C08G77/46;G03F7/075;H01L21/027 主分类号 G03F7/039
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