METHOD FOR REMOVING CONTACT DEFECT ON CONTACT INTERFACE IN METAL INTERCONNECTION PROCESS

摘要

PURPOSE: A method for removing a contact defect on contact interface in a metal interconnection process is provided to effectively eliminate a defect of contact resistance caused by a void on the contact interface between interconnections in a metal interconnection process by performing an electrical test for removing the contact defect or performing a heat process on a potential defect that cannot be eliminated. CONSTITUTION: A semiconductor fabricating pre-process is performed. An ILB(in line bake) process is performed. After a semiconductor wafer is tested, the semiconductor wafer is assembled into a package. The package is tested. The ILB process is performed at a temperature of 350 deg.C for 7 hours.