| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve such a phenomenon of generating difference in the line width between the center and the edge of a wafer in patterning by using a chemically amplifying photoresist. <P>SOLUTION: After an overcoat composition containing a compound of formula (1) and a solvent is applied on a photoresist, a patterning process is started. In formula (1), R represents a hydrogen atom or a methyl group and each of R<SB>1</SB>and R<SB>2</SB>represents a hydrogen atom or a 1-3C alkyl group. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
