| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve metallization reliability by improving the step coverage of a diffusion barrier layer using plasma processing of H2/Ar or NH3/Ar. CONSTITUTION: An interlayer dielectric(13) is formed on a substrate(11) with a lower metal line(12). A damascene pattern is formed to expose the lower metal line by selectively etching the interlayer dielectric. A diffusion barrier oxide layer(14) is formed on the damascene pattern. The diffusion barrier oxide layer is changed to a diffusion barrier metal film(15) by plasma processing using H2/Ar or NH3/Ar. Then, a copper film(16) is filled in the damascene pattern.
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