| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to remove overhang by forming uniformly a metal seed layer using annealing. CONSTITUTION: An interlayer dielectric(205) is formed on a substrate(201) with a contact plug(203). A trench is formed to expose the contact plug by selectively etching the interlayer dielectric. A metal barrier layer(208) is formed on the trench. A metal seed layer(209) is formed at the sidewall and the bottom of the trench. By flowing the metal seed layer using annealing, the uniformity is improved and overhang is removed. Then, a metal film(210) is entirely filled in the trench by electroplating. By polishing the metal film to expose the interlayer dielectric, a metal interconnection is formed.
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