| 摘要 |
Provided is a semiconductor device which can restrain a decrease in inner pressure. According an embodiment of the present invention, the semiconductor device comprises: a first conductive first semiconductor area; a second conductive second semiconductor area; a first insulating layer; and a first insulating area. The second semiconductor area is formed on the first semiconductor area. The first insulating layer is in contact with the second semiconductor area. The first insulating layer surrounds at least a part of the first semiconductor area and at least a part of the second semiconductor layer. The first insulating area surrounds at least a part of the first insulating layer. |
