| 摘要 |
According to an embodiment of the present invention, a semiconductor device includes: a first semiconductor area of a first conductive type; a second semiconductor area of the first conductive type; a third semiconductor area of a second conductive type; an insulating part; and a semiconductor part. The second semiconductor area is formed on a part of the first semiconductor area. A carrier concentration of the second conductive type of the second semiconductor area is lower than a carrier concentration of the first conductive type of the first semiconductor area. The third semiconductor area is formed on the second semiconductor area. The insulating part is in contact with the third semiconductor area. The insulating part is formed around the first and second semiconductor areas. The semiconductor part is formed around the insulating part. The semiconductor part is not in contact with the first semiconductor area. Therefore, the present invention is capable of having high withstanding voltage. |
