Semiconductor device

摘要

A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

主权项

1. A semiconductor device comprising:
a substrate; a first insulating film over the substrate; a metal oxide film over the first insulating film; a second insulating film over the first insulating film and the metal oxide film, the second insulating film comprising a first oxide insulating film and a first nitride insulating film stacked on the first oxide insulating film; a light-transmitting electrode over the second insulating film; a transistor comprising:
a gate electrode;a portion of the first insulating film over the gate electrode; anda first portion of the metal oxide film overlapping the gate electrode and defining a metal oxide semiconductor film as a channel formation region; a capacitor comprising:
a second portion of the metal oxide film defining a light-transmitting conductive film as a first capacitor electrode;a part of the second insulating film as a capacitor dielectric film over the light-transmitting conductive film; andthe light-transmitting electrode as a second capacitor electrode over the part of the second insulating film, wherein the first oxide insulating film is on and in contact with the first portion of the metal oxide film, wherein the first nitride insulating film is on and in contact with the second portion of the metal oxide film, and wherein the second portion of the metal oxide film contains a dopant in a higher concentration than the first portion of the metal oxide film.