发明名称 |
All-in-one power semiconductor module |
摘要 |
Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate.;According to the present invention, reliability can be improved by increasing bonding areas and bonding strength of semiconductor devices as well as processibilty can be enhanced and failure is reduced by adjusting a step difference with respect to an arrangement and height of the semiconductor devices. Further, a processing time resulting from an omission of a wire bonding process is reduced. |
申请公布号 |
US9455207(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201313830122 |
申请日期 |
2013.03.14 |
申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
Kim Kwang Soo;Yang Si Joong;Suh Bum Seok;Kwak Young Hoon;Ha Job |
分类号 |
H01L23/043;H01L23/049;H01L23/00;H01L23/14;H01L23/373 |
主分类号 |
H01L23/043 |
代理机构 |
Ladas & Parry, LLP |
代理人 |
Ladas & Parry, LLP |
主权项 |
1. An all-in-one power semiconductor module, comprising:
a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members having a portion embedded in the bridges, directly bonded with the plurality of first semiconductor devices, and electrically connecting the plurality of first semiconductor devices and the substrate, wherein at least one of the plurality of lead members is directly connected to at least one of the plurality of first semiconductor devices. |
地址 |
Suwon, Gyunggi-Do KR |