Overlay measuring method and system, and method of manufacturing semiconductor device using the same

摘要

An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
preparing a multi-layered structure of an upper pattern and a lower pattern, the lower pattern being formed by a first semiconductor process, the upper pattern being formed by a second semiconductor process; irradiating an electron beam onto the multi-layered structure to obtain an actual image of the upper and lower patterns; obtaining a first image representing the upper pattern and a second image representing the lower pattern from the actual image; matching each of the first and second images and a design image of the first and second patterns to determine an overlay between the upper pattern and the lower pattern; and compensating at least one of the first and second semiconductor processes based on the overlay measurement.