| 发明名称 |
Semiconductor devices and processing methods |
| 摘要 |
A method for processing a semiconductor device in accordance with various embodiments may include: providing a semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second pad; and electrically connecting the first pad and the second pad to one another after applying the at least one electrical test potential. |
| 申请公布号 |
US9455205(B2) |
申请公布日期 |
2016.09.27 |
| 申请号 |
US201314055982 |
申请日期 |
2013.10.17 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Zundel Markus;Hirler Franz;Nelle Peter;Borucki Ludger;Winkler Markus;Vogl Erwin |
| 分类号 |
G01R31/26;H01L21/66 |
主分类号 |
G01R31/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a semiconductor device, comprising:
providing the semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second pad; and electrically connecting the first pad and the second pad to one another after applying the at least one electrical test potential; wherein the semiconductor device comprises a plurality of device cells, and wherein the at least one electrical test potential is configured to detect defects in the plurality of device cells. |
| 地址 |
Neubiberg DE |
