Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices

摘要

Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

主权项

1. A method, sequentially comprising:
disposing a semiconductor substrate on a support in a vacuum chamber; exposing the semiconductor substrate to a first pulsed laser radiation having a pulse duration between about 10 nsec and about 10 μsec; exposing the semiconductor substrate to a first semiconductor precursor; forming a molecular layer of the first semiconductor precursor on the semiconductor substrate; exposing the semiconductor substrate to a second semiconductor precursor; reacting the second semiconductor precursor with the molecular layer of the first semiconductor precursor to form an epitaxial semiconductor layer; and exposing the epitaxial semiconductor layer to a second pulsed laser radiation having the same pulse duration as the first pulsed laser radiation.