发明名称 Method for annealing a semiconductor
摘要 A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
申请公布号 US6770143(B2) 申请公布日期 2004.08.03
申请号 US20020225132 申请日期 2002.08.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG HONGYONG;KUSUMOTO NAOTO
分类号 C30B1/02;H01L21/20;(IPC1-7):C23C16/00 主分类号 C30B1/02
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