发明名称 |
Method for annealing a semiconductor |
摘要 |
A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
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申请公布号 |
US6770143(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20020225132 |
申请日期 |
2002.08.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG;KUSUMOTO NAOTO |
分类号 |
C30B1/02;H01L21/20;(IPC1-7):C23C16/00 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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