Horizontal gate all around device isolation

摘要

Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

主权项

1. A method of forming a semiconductor device, comprising:
forming a superlattice structure on a substrate, wherein the superlattice structure comprises:
a first material layer;a second material layer; anda third material layer; patterning the superlattice structure; etching the superlattice structure and the substrate; performing a liner deposition process to form a liner on the superlattice structure; performing a shallow trench isolation process to deposit an oxide material layer on the substrate; and performing an annealing process to oxidize at least one of the first material layer, the second material layer, or the third material layer to form a buried oxide layer.