GATE HAVING EXPANDED UPPER AREA AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING THE SAME, FOR IMPROVING RESISTANCE CHARACTERISTIC OF GATE POLY

摘要

PURPOSE: A gate having an expanded upper area and a method for fabricating a semiconductor device having the same are provided to increase an upper area of a gate electrode by forming a wing portion on a lateral portion of an upper part of a gate poly. CONSTITUTION: The first insulating layer(12) is formed on a semiconductor substrate(10). A gate pattern(14) is formed on the semiconductor substrate. The second insulating layer is formed on the gate pattern and the semiconductor substrate. An upper surface of the second insulating layer is formed under the upper surface of the gate pattern by removing the second insulating layer. A conductive layer is formed on the second insulating layer and the upper surface of the gate pattern. A spacer(19) is formed on a lateral portion of an upper part of the gate pattern. The second insulating layer is removed therefrom.