| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor display panel easily manufacturable with superior optical and electric characteristics, and its manufacturing method. <P>SOLUTION: In this manufacturing method of the thin film transistor display panel, a first substrate 10 is prepared, a pixel electrode 13 and a transistor element are formed thereon, an optical element 19 is formed on the transistor element, a second substrate 20 is connected to the upper face of the element 19, and the first substrate 10 is removed to expose the electrode 13. The display panel has a substrate and the element 19 is formed thereon, the transistor element is formed on the element 19 with its surface facing downward, and the electrode 13 is formed outside the transistor element. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
