发明名称 MEMORY, IN WHICH DISTURB PHENOMENON IS SUPPRESSED
摘要 PURPOSE: A memory is provided to suppress disturb phenomenon during a read operation by suppressing polarization degradation during the read operation. CONSTITUTION: A read-rewrite operation is performed during the periods of T1, T2 and T3. The periods of T2 and T3 are determined so that polarization variation in a memory cell becomes equal when an electric field of opposite direction each other in each period of T2 and T3 are supplied to the memory cell. t1 is a period of making all bit lines be in a floating state. The start timing of t1 is equal to or faster by several nsec - several tens of nsec than the timing of applying Vcc to a selection word line(WL).
申请公布号 KR20040081017(A) 申请公布日期 2004.09.20
申请号 KR20040015025 申请日期 2004.03.05
申请人 SANYO ELECTRIC CO., LTD. 发明人 SAKAI NAOSHI;TAKANO HIROSHI
分类号 G11C7/12;G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C7/12
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