发明名称 |
MEMORY, IN WHICH DISTURB PHENOMENON IS SUPPRESSED |
摘要 |
PURPOSE: A memory is provided to suppress disturb phenomenon during a read operation by suppressing polarization degradation during the read operation. CONSTITUTION: A read-rewrite operation is performed during the periods of T1, T2 and T3. The periods of T2 and T3 are determined so that polarization variation in a memory cell becomes equal when an electric field of opposite direction each other in each period of T2 and T3 are supplied to the memory cell. t1 is a period of making all bit lines be in a floating state. The start timing of t1 is equal to or faster by several nsec - several tens of nsec than the timing of applying Vcc to a selection word line(WL).
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申请公布号 |
KR20040081017(A) |
申请公布日期 |
2004.09.20 |
申请号 |
KR20040015025 |
申请日期 |
2004.03.05 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SAKAI NAOSHI;TAKANO HIROSHI |
分类号 |
G11C7/12;G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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