METHOD OF WRITING DATA IN NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To extend the lifetime of a chip by preventing the number of times of writings from being increased due to erroneous writing or rewriting.

SOLUTION: A method of writing data in a nonvolatile semiconductor memory device 1 provided with an EEPROM memory cell array divided into physical blocks 2 composed of a plurality of pages comprises; a step of referring to a management table 20 to specify a physical block which corresponds to a logical page designated by a host 3 and where data are written; a step of writing data in the specified physical block 2; and a step of setting a pointer 21 pointing a physical page where data are next written in the block 2. When the pointer 21 is set, the pointer is incremented from a physical page on the source side in the specified physical block 2 toward a physical page on the drain side.

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