| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the formation of a complex with hydrogen in an acceptor under a low temperature. <P>SOLUTION: In a method of manufacturing a III-V compound semiconductor light emitting element, when a compound semiconductor is manufactured by utilizing MOVEP growth method, based on the fact that the higher O<SB>2</SB>concentration becomes, the better a p-typed doped semiconductor layer, such as a p-type GaN, is activated, by activating the p-type semiconductor layer under oxygen plasma atmosphere, hydrogen atom desorbed from the acceptor combines with oxygen and is discharged as H<SB>2</SB>O. Compared with the prior art, heat treating can be performed at a lower temperature, and the lifetime, the luminous efficiency and the like of the element are increased. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
