发明名称 |
Mask programmable read-only memory (ROM) cell |
摘要 |
A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N=2<M>-1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.
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申请公布号 |
US6809948(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20030430931 |
申请日期 |
2003.05.06 |
申请人 |
TOWER SEMICONDUCTOR, LTD. |
发明人 |
NACHUMOVSKY ISHAI;NISSAN-COHEN YAOV;STRAIN ROBERT J. |
分类号 |
G11C11/56;G11C17/16;H01L27/112;(IPC1-7):G11C17/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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