| 摘要 |
Hydrogen-doped silicon, germanium and/or carbon polymorphic materials (I) are new. Polymorphic materials of formula (I) are new. SixGeyCzXk : H (I) x, y and z = 0 or more; k = a number greater than 0; x + y + z = a number greater than 0; and X = He, C, Group III element, Group V element, O, halogen, Ti, lanthanide and/or actinide. Independent claims are also included for: the following: (1) a device comprising (I); and (2) the production of (I) by plasma enhanced chemical vapor deposition at 400degreesC or below.
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