发明名称 Backside metallization on sides of microelectronic dice for effective thermal contact with heat dissipation devices
摘要 A microelectronic device and methods of fabricating the same comprising a microelectronic die having an active surface, a back surface, and at least one side. The microelectronic die side comprises a trench sidewall, a lip and a channel sidewall. A metallization layer is disposed on the microelectronic die back surface and the trench sidewall.
申请公布号 US6812548(B2) 申请公布日期 2004.11.02
申请号 US20010000229 申请日期 2001.11.30
申请人 INTEL CORPORATION 发明人 DIAS RAJEN;CHANDRAN BIJU
分类号 H01L23/367;H01L23/42;H01L29/06;(IPC1-7):H01L23/544 主分类号 H01L23/367
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