| 摘要 |
The present invention is directed to controlling wafer temperature during rapid thermal processing. Regions and devices in an integrated circuit may be surrounded, inlayed, and overlaid with high absorptive structures to increase the average absorptivity of a region. This technique is useful for increasing average absorptivity in dense capacitive regions of integrated circuits. These dense capacitive regions typically have large areas of exposed low absorptivity polysilicon during rapid thermal processing steps. The exposed low absorptivity regions absorb less energy than other regions of the integrated circuit. As such, the RTP temperature varies between regions of the integrated circuit, causing variance in device size and characteristics. Adding absorptivity structures increase the absorption of energy in these regions, reducing temperature variance during RTP. The reduced temperature variance results in uniform manufacture of device. |
