| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device which is excellent in light emitting properties, simple in structure, and manufacturable at a low cost. <P>SOLUTION: An n-type ZnO layer 2 doped with Ga, a ZnO light emitting layer 3 which is doped with Ga and 10 μm in thickness, and a p-type ZnO layer 4 doped with N, are formed on a ZnO substrate 1. A non-doped region of thickness 0.5 μm is provided to the ZnO light emitting layer 3 at a point located nearly at a center but closer to the p-type ZnO layer 4 than to the n-type ZnO layer 2 in the direction of thickness. A Ga impurity level in the doped region of the light emitting layer 3 is excited by exciton emission that is preferentially generated in the non-doped region to induce emission of light through an impurity level for carrying out multiple emission of light. Without using a multi-quantum well structure, light can be emitted from nearly all the light emitting layer 3 that is comparatively large in thickness, so that the oxide semiconductor light emitting device which is simple in structure, manufactured at a low cost, and high in luminous efficiency can be obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
