| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device that single-chip is miniaturized easily for a redundancy circuit such as a single-chip memory used in the semiconductor device, and also to provide portable electronic equipment. <P>SOLUTION: The semiconductor storage device has a plurality of memory elements 1, and the redundancy circuit. The memory elements are constituted of a gate electrode 104 formed on a semiconductor layer 102 through a gate insulating film 103, a channel region disposed under the gate electrode 104, diffusion regions 107a and 107b formed on both sides of the channel region and having conductivity opposite to that of the channel region, and a memory function group 109 having a charge holding function on both sides of the gate electrode 104. The redundancy circuit is provided with an addressing means containing a plurality of redundancy lines and related cells and used for single chip memory. A decoder for selecting redundancy rows is selected based on an address signal, and the selected decoder is programmed. The redundancy circuit does not require any additional package pin, and programming is executed after packaging. The semiconductor storage device contains a means which constantly inactivates the further programming of the redundancy circuit for preventing the unprepared programming of the redundancy circuit by users. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
