| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which a storage element can be miniaturized and, at the same time, which can be reduced in manufacturing cost, because an insulator separating a channel region and a word electrode from each other is formed in a separated state and a short channel effect can be suppressed easily by reducing the thickness of the insulator. <P>SOLUTION: In the semiconductor storage device, a plurality of memory elements which are composed of field effect transistors are formed in an active region and disposed in a matrix-like state. The memory elements are formed on parts of word lines 1104 formed as gate electrodes on a semiconductor substrate 1101 through gate insulating films 1103 and on the lateral sides of the gate electrodes; and contain memory function groups 1105a and 1105b having charge holding functions, channel regions 1110 disposed under the gate insulating films 1103, and diffusion regions 1107 disposed on both sides of the channel regions 1110. In addition, two memory elements adjoining each other in the same row own jointly the diffusion region 1107 disposed in the area between the gate electrodes of the memory elements. Moreover, two memory elements adjoining each other in the same column also own jointly the diffusion region 1107 disposed in the area between the gate electrodes of the memory elements. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
