| 摘要 |
A current or voltage generator is integrated onto a silicon wafer and may include a first element including a first NMOS transistor having its source connected to ground through an electrical resistance, a second element including a second NMOS transistor having its source connected to ground, and a bias circuit for the first and second elements. The second element may include a voltage divider. The gate of the second NMOS transistor may be connected to a dividing node of the voltage divider, and the anode of the voltage divider may be connected to the gate of the first NMOS transistor. Both elements may be biased at an operating point corresponding to an identical temperature stability point for both elements.
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