WIRING HAVING LOW RESISTANCE AND EXCELLENT CHEMICAL RESISTANCE FOR SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, TFT DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A wiring for semiconductor device, a method for fabricating the same, a TFT display panel including the same, and a method for fabricating the same are provided to prevent the corrosion of the wiring and minimize delay of signals by forming a self assembled mono-layer on a metal layer. CONSTITUTION: A metal layer(20) is formed on an upper surface of a substrate(10). The metal layer is formed with silver, gold, copper, and an alloy of the silver, the gold, and copper. A self assembled mono-layer(30) is formed on an upper surface of the metal layer. The self assembled mono-layer includes S and CH2.