METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE FOR REDUCING RESISTANCE BY SECURING CONTACT AREA

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to reduce a resistance by securing a contact area between a via and the metal line. CONSTITUTION: A via hole is formed by etching partially an insulating layer of a semiconductor substrate(200). The via hole is buried by forming a first metal layer on the insulating layer. A via(230a) including an erosion region is formed by removing a first metal layer within the via hole. A second metal layer is formed by coating a metal material on the via including the erosion region and the insulating layer. A metal pattern contacting the entire upper surface of the via is formed by etching partially the second metal layer.