发明名称 Method for precision-processing a fine structure
摘要 A two-dimensional crystalline film of ferritin 4 holding iron-oxide cores 1 is formed on a silicon substrate 6. The silicon substrate 6 is then etched by using at least the cores 1 as an etching mask. Since the cores 1 have a small diameter of 6 nm, a fine structure can be formed on the substrate, enabling manufacturing of a semiconductor light-emitting element and various semiconductor devices using a quantum effect.
申请公布号 US6838386(B2) 申请公布日期 2005.01.04
申请号 US20020168201 申请日期 2002.06.19
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMASHITA ICHIRO
分类号 H01L21/308;(IPC1-7):H01L21/302 主分类号 H01L21/308
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