发明名称 |
Method for precision-processing a fine structure |
摘要 |
A two-dimensional crystalline film of ferritin 4 holding iron-oxide cores 1 is formed on a silicon substrate 6. The silicon substrate 6 is then etched by using at least the cores 1 as an etching mask. Since the cores 1 have a small diameter of 6 nm, a fine structure can be formed on the substrate, enabling manufacturing of a semiconductor light-emitting element and various semiconductor devices using a quantum effect.
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申请公布号 |
US6838386(B2) |
申请公布日期 |
2005.01.04 |
申请号 |
US20020168201 |
申请日期 |
2002.06.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMASHITA ICHIRO |
分类号 |
H01L21/308;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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