SILICON CRYSTALLIZATION METHOD FOR FORMING SILICON CRYSTAL LAYER INCLUDING HIGH-QUALITY GRAINS BY USING SILICIDE GENERATED FROM REACTION BETWEEN CATALYTIC METALS AND SILICON IONS

摘要

PURPOSE: A silicon crystallization method is provided to form a silicon crystal layer including high-quality grains by using silicide generated from reaction between catalytic metals and silicon ions. CONSTITUTION: A buffer layer(102) is formed on a substrate(100). A catalytic metal is absorbed into the buffer layer. The substrate including catalytic metal is inserted into a PECVD reaction chamber(200). A silicide is formed by implanting silicon ions analyzed from a plasma reaction into the substrate. A crystal core(106) is formed from the silicide. A crystal grain is formed by growing the crystal core. A crystal layer is formed by crystal grains.