| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film deposition system where the amount of film deposition can be controlled even the amount of film deposition is large. <P>SOLUTION: A thin film deposition system 1 is provided with: a holding member 7 for holding substrates 3 and allowing the same to pass over the surface of each target; a film thickness detecting mechanism 8 for detecting the thickness of films to be deposited on the substrates 3 for each of a Si target 5 and Nb target 6; and a controlling part 10 for controlling the material feeding rate from each target 5 and 6 on the basis of the value detected by the film thickness detecting mechanism 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
