| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enable high density packaging and to improve the electrical characteristic of a semiconductor device. <P>SOLUTION: The semiconductor device is composed of a multilayer wiring board provided with a plurality of lands 23d, a semiconductor chip flip-chip-connected with the lands 23d arranged aligned like a lattice on the surface layer of the multilayer wiring board, a plurality of gold bumps arranged between the multilayer wiring board and the semiconductor chip, a plurality of solder balls provided on the multilayer wiring board, and a sealing part arranged in the periphery of the gold bumps and formed by underfill sealing. The plurality of lands 23d for flip-chip connection on the multilayer wiring board have a plularity of kinds of land diameters and are provided with a plurality of kinds of pitches, thereby increasing the number of effective pins to enable the high density packaging and to improve the electrical characteristic of a BGA. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
