METHOD FOR FORMING SEMICONDUCTOR DEVICE TO FACILITATE SUBSEQUENT PROCESS WITHOUT DEPOSITING ADDITIONAL CAPPING LAYER

摘要

PURPOSE: A method for forming a semiconductor device is provided to facilitate a subsequent process without depositing an additional capping layer by performing a plasma treatment process on an FSG(fluorinated silica glass) layer as an organic low-k layer used as an interlayer dielectric. CONSTITUTION: An FSG layer used as an interlayer dielectric(13) of a semiconductor device is deposited by a PECVD(plasma enhanced chemical vapor deposition) method while N2O gas, SiF4 gas and SiH4 gas are flowed. In the final step of depositing the FSG layer, the flow of the N2O gas and the SiF4 gas stops and CH4 gas is flowed to perform a plasma treatment process.