MULTILAYERED STRUCTURE INCLUDING EPITAXIAL LAYER WITH LOW DISLOCATION DENSITY, SEMICONDUCTOR DEVICE USING THE SAME AND FABRICATING METHOD THEREOF TO EMBODY LOW DISLOCATION DENSITY AND REDUCE THICKNESS

摘要

PURPOSE: A multilayered structure including an epitaxial layer with a low dislocation density is provided to embody a low dislocation density and reduce its thickness by inserting an intermediate epitaxial layer into a hetero-epitaxial layer such that the intermediate epitaxial layer is thinner than the hetero-epitaxial layer. CONSTITUTION: A substrate is prepared. A hetero-epitaxial layer(200) is formed on the substrate, having a different lattice constant from that of the substrate. At least one intermediate epitaxial layer(300) is inserted into the hetero-epitaxial layer. The intermediate epitaxial layer has a different lattice constant from that of the hetero-epitaxial layer in contact with the intermediate epitaxial layer. The thickness of the intermediate epitaxial layer is smaller than that of the hetero-epitaxial layer to absorb the strain of the hetero-epitaxial layer.