发明名称 |
Silicide-silicon oxide-semiconductor antifuse device and method of making |
摘要 |
An antifuse contains a first silicide layer, a grown silicon oxide antifuse layer on a first surface of the first silicide layer, and a first semiconductor layer having a first surface in contact with the antifuse layer.
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申请公布号 |
US6853049(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20020095962 |
申请日期 |
2002.03.13 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
HERNER S. BRAD |
分类号 |
H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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