发明名称 ELECTRO-OPTICAL DEVICE FOR REDUCING THE OCCURRENCE OF IMAGE FAULTS DUE TO PARASITIC CAPACITANCES LOCATED BETWEEN THIN FILM TRANSISTORS IN A SAMPLING CIRCUIT AND AN ELECTRONIC APPARATUS
摘要 PURPOSE: An electro-optical device and an electronic apparatus are provided to be capable of reducing the occurrence of image faults due to parasitic capacitances located between thin film transistors in a sampling circuit when a plurality of data lines are simultaneously driven. CONSTITUTION: An electro-optical device has n image signal lines to which n serial to parallel converted image signals are supplied. A driving circuit of the electro-optical device has a sampling circuit including a plurality of thin film transistors(71A,71B). The thin film transistors have drains connected to drain wirings(72D,73D) extended from data lines, sources connected to source wirings(72S,73S) extended from image signal lines, and gates(72G,73G) sandwiched between the drain and the source wirings. The thin film transistors are arranged to correspond to the data lines. A data line driving circuit supplies sampling circuit driving signals to the gates of the thin film transistors in groups(G1,G2) of n thin film transistors, which are coupled to n simultaneously driven data lines among the data lines. Two thin film transistors adjacent to a boundary(R) between thin film transistor groups are arranged such that arrangements of the source and drain wirings are opposite to each other.
申请公布号 KR20050021272(A) 申请公布日期 2005.03.07
申请号 KR20040067123 申请日期 2004.08.25
申请人 SEIKO EPSON CORPORATION 发明人 MOCHIZUKI HIROAKI;UCHIDA MASAHIDE;YAMASAKI YASUJI
分类号 G02F1/133;G02F1/1362;G09F9/30;G09G3/20;G09G3/36;(IPC1-7):G02F1/133 主分类号 G02F1/133
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