发明名称 |
DEVICE AND METHOD FOR PLASMA TREATMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which plasma of a higher density can be obtained in a state where the rise of manufacturing cost or the occurrence of damages is suppressed. <P>SOLUTION: The device is provided with a lower electrode 102 on which a substrate W to be treated is placed and an upper electrode 103 which is disposed to face the lower electrode 102 in a hermetically sealable treatment chamber 101. The lower and upper electrodes 102 and 103 are fixed in the chamber 101 in insulated and separated states. High-frequency power can be supplied across the electrodes 103 and 102 from a high-frequency power source 106. In addition, a field emission type electron supplying source 110 constituted of, for example, a plurality of carbon nanotubes is provided on the surface facing the lower electrode 102 of the upper electrode 103 which becomes an anode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005072345(A) |
申请公布日期 |
2005.03.17 |
申请号 |
JP20030301366 |
申请日期 |
2003.08.26 |
申请人 |
GOTO TOSHIO;HORI MASARU;TOKYO ELECTRON LTD |
发明人 |
GOTO TOSHIO;HORI MASARU;ISHII NOBUO |
分类号 |
H05H1/46;H01L21/205;H01L21/304;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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