| 摘要 |
A semiconductor component includes a RESURF transistor ( 100, 200, 300, 400, 500 ) that includes a first semiconductor region ( 110, 210, 310, 410, 510 ) having a first conductivity type and an electrically-floating semiconductor region ( 115, 215, 315, 415, 515, 545 ) having a second conductivity type located above the first semiconductor region. The RESURF transistor further includes a second semiconductor region ( 120, 220, 320, 420, 520 ) having the first conductivity type located above the electrically-floating semiconductor region, a third semiconductor region ( 130, 230 ) having the first conductivity type located above the second semiconductor region, and a fourth semiconductor region ( 140, 240, 340, 440, 540 ) having the second conductivity type located above the second semiconductor region. In a particular embodiment, the fourth semiconductor region and the electrically-floating semiconductor region deplete the second semiconductor region when a reverse bias is applied between the third semiconductor region and the fourth semiconductor region.
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