发明名称 |
Flash memory cell having reduced leakage current |
摘要 |
A flash memory cell of the present invention comprises a floating gate, having a charge trapping region and a fin region. A source region and a drain region is formed proximate the floating gate. A control gate is formed above the charge trapping region of the floating gate. The fin region advantageously reduces leakage current, thereby allowing further scaling of the cell.
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申请公布号 |
US6897518(B1) |
申请公布日期 |
2005.05.24 |
申请号 |
US20030618191 |
申请日期 |
2003.07.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PARK SHEUNG HEE;FASTOW RICHARD M.;JU DONG-HYUK |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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