| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress outgassing from a resist by exposing light and to obtain a pattern of increased fineness having a good shape by immersion lithography. <P>SOLUTION: A resist film 102 made of a chemically amplified resist including a water-soluble polymer is formed on a substrate 101, whereas a material having lower gas permeability than the chemically amplified resist is used as the water-soluble polymer. Subsequently, pattern exposure is carried out by selectively irradiating the resist film 102 with exposing light 104 in a state where a liquid 103 made of water is spread on the resist film 102, and thereafter, the resultant resist film 102 is developed. Thus, a resist pattern 102a of increased fineness having a good shape is obtained from the resist film 102. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
