发明名称 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition for dry development with which it is possible to form a high resolution pattern with low line edge roughness in a silylation process, and a method for forming the resist pattern. <P>SOLUTION: The photosensitive resin composition used for photolithography, which has high resolution and of which the aspect is heightened, is constructed by including a polymer satisfying a condition of having 1,000-50,000 weight average molecular weight (Mw) in terms of polystyrene and 1.0-1.5 molecular weight variance ((weight average molecular weight)/(number average molecular weight) (Mw/Mn)) in terms of polystyrene as a component (A), and a radiation sensitive acid generating agent as a component (B) and at least one functional group out of a hydroxyl group, a carboxyl group, an amino group, a thiol group and an amide group, protected with an acid dissociative group, as a component (C). <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005274594(A) 申请公布日期 2005.10.06
申请号 JP20040083353 申请日期 2004.03.22
申请人 CANON INC 发明人 ITO TOSHIKI
分类号 G03F7/004;G03F7/38;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址