发明名称 |
Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask |
摘要 |
A method for removal of residue after plasma etching a film stack comprising a patterned photoresist material layer, a hard mask layer, a conductive layer, and a magnetic layer, wherein the patterned photoresist material layer and the hard mask layer form a dual mask. The method cleans a substrate containing the film stack after the dual mask of the film stack has been etched to remove residue produced during the etching process. The cleaning step is performed in a solution comprising hydrogen peroxide and ammonium hydroxide that removes the residue.
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申请公布号 |
US6964928(B2) |
申请公布日期 |
2005.11.15 |
申请号 |
US20020231675 |
申请日期 |
2002.08.29 |
申请人 |
YING CHENTSAU;CHEN XIAOYI;NALLAN PADMAPANI C;KUMAR AJAY |
发明人 |
YING CHENTSAU;CHEN XIAOYI;NALLAN PADMAPANI C.;KUMAR AJAY |
分类号 |
H01F41/30;H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01F41/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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