发明名称 |
Ferroelectric memory cell with angled cell transistor active region and methods for fabricating the same |
摘要 |
Ferroelectric memory cells and fabrication methods are provided in which the memory cell comprises a ferroelectric capacitor in a capacitor layer above a semiconductor body, and a cell transistor with first and second source/drains formed in an active region of the semiconductor body. The active region extends along a first axis in the semiconductor body, and the cell includes a gate electrically coupled with a wordline structure that extends along a second axis, wherein the first axis and the second axis are oblique.
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申请公布号 |
US6967365(B2) |
申请公布日期 |
2005.11.22 |
申请号 |
US20030620196 |
申请日期 |
2003.07.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SUMMERFELT SCOTT ROBERT;BOKU KATSUSHI |
分类号 |
H01L21/02;H01L21/768;H01L21/8246;H01L27/115;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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