| 摘要 |
The invention concerns a vertical component with a four-layered structure comprising a thick lightly-doped zone ( 1 ) of a first type of conductivity providing the component voltage strength, enclosed with a peripheral wall ( 2 ) of a second type of conductivity extending vertically from one surface to the other of the component, and highly doped layer ( 3 ) of the second type of conductivity extending over the entire rear surface of the component. A lightly-doped layer ( 21 ) of the second type of conductivity extends over the entire surface of the component at the interface between the lightly-doped thick zone of the first type of conductivity and the highly-doped layer of the second type of conductivity.
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