| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which a naturally-produced electric field in an active layer is reduced and which can become in high luminance. <P>SOLUTION: The semiconductor light emitting element 1 includes an n-type clad layer 3, a p-type clad layer 7 located on the n-type clad layer 3, and an active layer 5 which is located between an n-type clad layer 3 and a p-type clad layer 7 and is composed of a nitride. An angle, which is formed between an axis orthogonal to an interface of the n-type clad layer 3/the active layer 5 and a c axis in the active layer 5, and an angle, which is formed between an axis orthogonal to an interface of the active layer 5/the p-type clad layer 7 and the c axis in the active layer 5, are larger than zero respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
